| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1647712 | Materials Letters | 2012 | 4 Pages |
Abstract
⺠Grass-like GaN nanostructured leaves have been synthesized by CVD method. ⺠FE properties show turn-on field of 7.82 V μmâ 1 and threshold field of 8.96 V μmâ 1. ⺠This turn-on field value is enough for potential use in electron emission devices. ⺠Strong PL emission peak at 368.8 nm show its vast applications in LEDs and devices.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Ghulam Nabi, Chuanbao Cao, Waheed S. Khan, Sajad Hussain, Zahid Usman, Noor Abass Din Khattak, Zulfiqar Ali, Faheem K. Butt, Sajjad Hussain Shah, Muhammad Safdar,