| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1647954 | Materials Letters | 2011 | 4 Pages |
Photoluminescence enhancement due to dipole field from gold nanoparticles was observed at 77 K for GaAs capped InAs quantum dots. The gold nanoparticles were coupled to the surface of the cap layer by using dithiol ligands. The enhancement was investigated as a function of the GaAs capped layer thickness. An order of magnitude enhancement in the emission was observed in samples with a cap thickness of 12 nm. This enhancement however is drastically decreased in samples with a cap thickness of 200 nm. The observed enhancement is interpreted in terms of photon scattering from the large dipole scattering cross section.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► We synthesize gold nanoparticles and deposit them on InAs quantum dot samples. ► We examine the surface plasmon effects on the photoluminescence as a function of cap layer thickness and excitation power. ► Decreasing the cap layer thickness will increase the photoluminescence intensity. ► Increasing the laser power will decrease the photoluminescence enhancement.
