Characterization of 4H semi-insulating silicon carbide single crystals using electron beam induced current

In this work we demonstrate the electron beam induced current (EBIC) contrast of dislocations in semi-insulating (SI) bulk SiC single crystals. Our investigations revealed that the screw dislocations produce dark EBIC contrast indicating high leakage current in the defective regions. This type of screw dislocations are harmful for high resolution radiation detectors and should be eliminated by improving the crystal qualities. Chemical etching in molten KOH was used for dislocation mapping in the test structures and to correlate EBIC contrast with dislocations. The EBIC contrast found in our study in SI SiC is discussed.