Article ID Journal Published Year Pages File Type
1648334 Materials Letters 2011 4 Pages PDF
Abstract

The growth of GaN nanowires on sapphire substrates coated with Ni or Pt catalyst was investigated to address their behavior in a vapor–liquid–solid mechanism. Our observations revealed that both the two catalysts, which led to the growth of nanowires, behave rather complex, including diffusion and re-agglomeration from the coated films to the surface of the micro crystals that is formed in an early stage of growth by vapor–solid mechanism. GaN nanowires have a diameter and length of ~100 nm and several tens of micrometers, respectively, and tend to align epitaxially on the facets of the micro crystals.

Graphical abstractRe-assembling of metal catalyst in the course of the growth of GaN nanowires.Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Ni and Pt as catalysts for the VLS growth of GaN nanowires. ► Interfacial layers are formed at early stage. ► Catalysts are re-assembled on the interfacial layer in advance of VLS growth. ► Re-assembling makes difficult to control the GaN nanowire growth.

Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
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