Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1648334 | Materials Letters | 2011 | 4 Pages |
The growth of GaN nanowires on sapphire substrates coated with Ni or Pt catalyst was investigated to address their behavior in a vapor–liquid–solid mechanism. Our observations revealed that both the two catalysts, which led to the growth of nanowires, behave rather complex, including diffusion and re-agglomeration from the coated films to the surface of the micro crystals that is formed in an early stage of growth by vapor–solid mechanism. GaN nanowires have a diameter and length of ~100 nm and several tens of micrometers, respectively, and tend to align epitaxially on the facets of the micro crystals.
Graphical abstractRe-assembling of metal catalyst in the course of the growth of GaN nanowires.Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Ni and Pt as catalysts for the VLS growth of GaN nanowires. ► Interfacial layers are formed at early stage. ► Catalysts are re-assembled on the interfacial layer in advance of VLS growth. ► Re-assembling makes difficult to control the GaN nanowire growth.