Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1648390 | Materials Letters | 2010 | 4 Pages |
Abstract
At room temperature, TiO2 films were deposited by direct current pulse magnetron sputtering. Varying the O2/Ar flow ratio, TiO2 films with different crystalline structures and surface morphologies were obtained. X-ray diffraction spectra and atomic force microscopy showed TiO2 films mainly existed as amorphous and crystalline structures when the O2/Ar flow ratio was less and more than 6/14, respectively. With these results, a critical point was found at O2/Ar = 6/14. The film growth behavior was controlled by the shadowing effect and the mixture of crystallographic orientation and grain growth effects, when the O2/Ar flow ratio was less and more than the critical point, respectively. The present work reveals a simple way to prepare the high quality anatase phase TiO2 films at room temperature, as well as the growth mechanism behind it.
Related Topics
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Authors
Wanyu Ding, Dongying Ju, Weiping Chai,