Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1648662 | Materials Letters | 2011 | 4 Pages |
Abstract
Geometric phase analysis (GPA) is applied to determining the strain fields in AlSb/GaAs hetero-epitaxial film from high-resolution electron microscopy (HREM) images. The misfit dislocations along the hetero-interface are shown to be predominantly 90° Lomer dislocations. The epitaxial film is almost fully relaxed by a high density of misfit dislocations. The 90° Lomer dislocations are assumed to be formed by either recombination of two 60° mixed misfit dislocations through a glide and climb process or direct nucleation at the interface. The atomic steps (ASs) are visualized in the strain map, providing a new method for identifying the ASs at the interface.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
X.Q. He, C. Wen, X.F. Duan, H. Chen,