Growth orientation of the tin whiskers on an electrodeposited Sn thin film under three-point bending

To release the compressive stress in an as-electrodeposited tin (Sn) layer, filamentary Sn whiskers were formed on the layer aged at room temperature. A three-point bending test was performed on an electrodeposited Sn layer to investigate the Sn whisker growth under mechanically applied tensile stress. Sn whisker growth was mitigated on the Sn layer subjected to a tensile stress in bending. The growth orientation of the Sn whiskers formed on the high tensile stress region was random but directional on the low tensile stress region.