Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1650162 | Materials Letters | 2009 | 4 Pages |
Abstract
Surface morphology and microstructure of indium tin oxide (ITO) thin films sputter deposited without heat treatment were obviously different from each other depending on the hydrogen concentration [H] in the working gas. The film surface became smoother with increasing [H] to 1%, but nucleation and growth of grains were apparent above [H] = 1.5%. The width of columnar grains in the ≤200 nm-thick films narrowed from ≈100 nm to ≈50 nm with increasing [H] from 0% to 1.5%. Randomly oriented and agglomerated grains were observed for the film deposited with [H] = 3.6%. Hydrogen added to the working gas induced reduction of the grain size, and then resulted in lowering of the carrier mobility.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Suning Luo, Shigemi Kohiki, Koichi Okada, Masanori Mitome, Fumiya Shoji,