Synthesis of K-doped p-type ZnO nanorods along (100) for ferroelectric and dielectric applications

Urchin-like p-type ZnO nanorods were grown along preferred (100) direction by low temperature solution technique and subjected to morphological, structural, Hall conductivity, dielectric and ferroelectric characterization. Hall voltage, bulk carrier density (hole) and mobility were found to be 0.058 V, 2.36 × 1019 cm−3 and 0.025 cm2/V s, respectively. In the temperature variation of the dielectric constant a phase transition at 343 K was observed at various frequencies. The piezoelectric charge coefficient (d33) was found to be 1.60 pC/N. In the ferroelectric hysteresis loop studies, ZnO exhibited remnant polarization and coercive field at 0.083 µC/cm2 and 3.86 kV/cm, respectively.