| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1650759 | Materials Letters | 2008 | 4 Pages |
Abstract
ZnO nanowires have been successfully synthesized on Si(100) substrate by a simple physical vapor deposition method. Thin film ZnO layer used as the nucleation site can avoid the contamination from the metal catalysts, and it can also control the growth direction of ZnO nanowires. Well-aligned ZnO nanowire arrays along the normal direction of the substrate can be obtained by controlling different growth temperature, which was demonstrated by XRD and FESEM analysis. A strong ultraviolet emission at room temperature was observed in all ZnO nanostructures. In addition, the growth mechanisms of the ZnO nanowires with different growth temperature is discussed in details.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
F. Fang, D.X. Zhao, J.Y. Zhang, D.Z. Shen, Y.M. Lu, X.W. Fan, B.H. Li, X.H. Wang,