| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1651443 | Materials Letters | 2007 | 4 Pages |
Abstract
Homoepitaxial ZnO films have been grown via liquid-phase epitaxy (LPE) on (0001) oriented ZnO substrates. X-ray rocking curve revealed the high quality of the ZnO films with a FWHM of 40 arc sec. Films of thickness about 20 μm were grown in the temperature range 700–720 °C. The growth rate of ZnO films was estimated to be 0.3 μm h− 1. Atomic force microscope analysis showed that the surface roughness of ZnO films was very low, which further confirmed the high crystallinity of ZnO films.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Guangqing Pei, Changtai Xia, Feng Wu, Jungang Zhang, Yongqing Wu, Jun Xu,