Dielectric properties of Sb2O3-doped Ba0.672Sr0.32Y0.008TiO3

Sb2O3-doped Ba0.672Sr0.32Y0.008TiO3 (BSYT) dielectric ceramics were prepared by conventional solid state method, and their dielectric properties were investigated with variation of Sb2O3 doping content and sintering temperature. The X-ray diffraction patterns indicated that all the BSYT specimens possessed the perovskite polycrystalline structure. The experimental results reveal that the introduction of Sb2O3 into Ba0.672Sr0.32Y0.008TiO3 can control the grain growth, reduce the relative dielectric constant and dielectric loss, shift the Curie temperature to lower temperature and significantly improve the thermal stability of the BSYT ceramics. The samples doped with 1.6 wt.% Sb2O3 sintered at 1320 °C for 2 h exhibited attractive properties, including high relative dielectric constant (> 1500), low dielectric loss (< 40 × 10− 4), low temperature coefficient of capacitor(< ± 35%) over a wide temperature range from − 25 °C to + 85 °C.