Effect of nitrogen ion implantation on the sprayed ZnSe thin films

The ZnSe thin films were deposited onto glass substrates by the spray pyrolysis method using mixed aqueous solutions of ZnCl2 and SeO2 at the substrate temperature 430 °C. These films were implanted with 130 keV nitrogen ions to various doses from 1 × 1016 to 1 × 1017 ions/cm2. We have analysed the properties of the nitrogen ion-implanted ZnSe thin films using X-ray diffraction and optical transmittance spectra. The values of optical bandgap have been determined from the absorption spectra. The bandgap of the N+ doped films decreased from 2.70 eV for undoped film to 2.60 eV for maximum doping probably due to band-tailing, whereas the absorption coefficient values increased with the increase of the implantation dose.