| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1652174 | Materials Letters | 2007 | 4 Pages |
Abstract
The growth behavior of CaHfO3 on (001) Ni and Ge substrates was examined. CaHfO3 is a perovskite insulator that is suitable for applications as a buffer layer or gate dielectric. The tendency for CaHfO3 growth on both (001) Ni and (001) Ge substrates is to orient with the CaHfO3 (200) + (121) planes parallel to the surface, which corresponds to the (110) orientation in the pseudo-cubic geometry. This differs from that of CaHfO3 on perovskites, such as (001) LaAlO3, where a pseudo-cube-on-cube orientation is observed.
Related Topics
Physical Sciences and Engineering
Materials Science
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Authors
Y.W. Kwon, D.P. Norton, John D. Budai,