| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1652199 | Materials Letters | 2007 | 4 Pages |
Abstract
The microstructures and chemical bonding configurations of amorphous silicon nitride films with various compositions are investigated. Room temperature photoluminescence is observed which depended on the film concentrations. The post-annealing treatment at moderate temperature region of 700–900 °C is performed and the annealing effect on the structures and luminescence is studied. It is found that the structural rearrangements occurred after thermal annealing due to the effusion of hydrogen from the films. The luminescence is also changed after annealing and the possible originations are briefly discussed.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Jun Xu, Yunjun Rui, Deyuan Chen, Jiaxin Mei, Liping Zhou, Zhanhong Cen, Wei Li, Kunji Chen,