Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1652322 | Materials Letters | 2006 | 4 Pages |
Abstract
Sandwiched FeCuNbCrSiB/Cu/FeCuNbCrSiB films with a meander structure have been realized on silicon cantilever by Microelectromechanical Systems (MEMS), and the stress-impedance (SI) effects have been studied in the frequency range of 1–40 MHz. Experimental results show that the values of SI ratio increase with the deflection, and a large SI ratio of − 24.5% at 5 MHz with the deflection of 2 mm is obtained in the sandwiched FeCuNbCrSiB/Cu/FeCuNbCrSiB films, and the strain gauge factor is 1255 at 5 MHz, and is larger than the conventional metal strain gauge and semiconductor strain gauge, which is attractive for the applications of strain sensors.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Ji-An Chen, Wen Ding, Yong Zhou, Ying Cao, Zhi-Min Zhou, Ya-Min Zhang,