Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1652339 | Materials Letters | 2006 | 4 Pages |
Abstract
In-doped ZnO nanometer thick disks were successfully fabricated by thermal evaporation of a powder mixture of Zn, In2O3 and graphite without catalyst. SEM images show that some ZnO disks have perfect dodecagon shape. These disks are about 1∼3 μm in size and 40∼100 nm in thickness. XRD, TEM and EDS observations show that the disks are single-crystalline ZnO with wurtzite structure. The disks grow mainly along the twelve symmetric directions of <21¯1¯0> and <101¯0>, while the growth along [0001] is suppressed. The In content of the disks reaches 27.4 at.%. Room temperature photoluminescence spectra show that the UV emission peak blueshifts and become broader after doping.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Juan Liu, Yue Zhang, Junjie Qi, Yunhua Huang, Xiaomei Zhang, Qingliang Liao,