| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1652535 | Materials Letters | 2007 | 4 Pages |
Abstract
Hybrid carbon nanotube-semiconductor systems offer unique properties by combining the advantages of one-dimensional conductors with the broad opportunities of semiconductor technology. Thus, it is desirable to incorporate the nanotube growth in III–V semiconductor systems. We present the directed growth of carbon nanotubes from prepatterned CrNi catalyst structures on GaAs.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
R. Engel-Herbert, Yukihiko Takagaki, T. Hesjedal,