| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1652974 | Materials Letters | 2007 | 4 Pages |
Abstract
Ytterbium-doped Bi4Ti3O12 (Bi3.4Yb0.6Ti3O12, BYT) ferroelectric thin films were successfully deposited on Pt(111)/Ti/SiO2/Si(100) substrates by chemical solution deposition (CSD). X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to identify the crystal structure, the surface and cross-section morphology of the deposited ferroelectric films. Structure evolution and ferroelectric properties of the as-prepared thin films annealed under different temperatures (600 °C–750 °C) were studied in detail. Additionally, the mechanism concerning the dependence of electrical properties of the BYT ferroelectric thin films on the annealing temperature was discussed.
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Authors
C.P. Cheng, M.H. Tang, Z. Ye, X.L. Zhong, X.J. Zheng, Y.C. Zhou, Z.S. Hu,