| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1653283 | Materials Letters | 2006 | 4 Pages |
The amorphous tantalum ethylate as the precursor for preparation of TaC is prepared. Tantalum ethylate film is characterized by FT–IR spectra and XRD. The phase constitutions of the intermediate products during TG–DTA measurement are defined by XRD. The decomposition mechanism of tantalum ethylate precursor during formation of TaC on C/C composite material is investigated. The results indicate that, in the course of formation of TaC, when the tantalum ethylate precursor is decomposed at temperature from about 35 to 500 °C, TaO is first produced below 500 °C, then TaO is transformed into Ta2O5 above 500 °C. Throughout the decomposition process of the tantalum ethylate precursor, there are no tantalum carbonides formed. Ta2O5 is deoxidized by the sufficient C in the C/C composite materials and TaC is formed finally.
