Properties of Al-doped ZnO thin film sputtered from powder compacted target

We demonstrated the characterization of Al-doped ZnO thin film deposited from powder compacted target using RF magnetron sputtering. Various film thicknesses and substrate temperatures were used as deposition parameters for the purpose of obtaining optimum results. It shows that deposited AZO films have stronger preferred (002) c-axis crystalline orientation as both film thickness and substrate temperature increased. Film's resistivity and sheet resistance significantly decreased as film thickness increased. Higher surface roughness and irregular surface structure occurred at 200 °C substrate temperature. Films possess high optical transmittance of approximately 90% and demonstrated an optical band gap of 3.35 eV. At 200 °C substrate temperature, a resistivity of 4.4 × 10− 3 Ω cm was obtained.