Article ID Journal Published Year Pages File Type
1653784 Materials Letters 2006 4 Pages PDF
Abstract

Electric-field-aligned vertical growth of the In2O3 nanowires is realized on InAs substrates at low temperatures in a plasma environment. The experimental results show that the In2O3 nanowires are single crystal and have small diameters about 10 nm. It is revealed that the growth follows a catalyst-assisted growth mechanism. The dipoles in the In2O3 nanowires, induced by the electric field of plasma sheath, are responsible for the alignment of the In2O3 nanowires.

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Physical Sciences and Engineering Materials Science Nanotechnology
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