Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1653784 | Materials Letters | 2006 | 4 Pages |
Abstract
Electric-field-aligned vertical growth of the In2O3 nanowires is realized on InAs substrates at low temperatures in a plasma environment. The experimental results show that the In2O3 nanowires are single crystal and have small diameters about 10 nm. It is revealed that the growth follows a catalyst-assisted growth mechanism. The dipoles in the In2O3 nanowires, induced by the electric field of plasma sheath, are responsible for the alignment of the In2O3 nanowires.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
S.Q. Li, Y.X. Liang, T.L. Guo, Z.X. Lin, T.H. Wang,