| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1653824 | Materials Letters | 2006 | 4 Pages |
Abstract
Based on a thermodynamic model for size-dependent melting temperature, the size-dependent band-gap of low dimensional semiconductor compounds is modeled without any adjustable parameter. The model predicts an increase of the band-gap of nanoparticles and nanowires for IIB-VIB and IIIB-VB semiconductor compounds, with decreasing their size, which is supported by available experimental and other theoretical results.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
M. Li, J.C. Li,