| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1653840 | Materials Letters | 2005 | 4 Pages |
Abstract
The route to grow InP-based heteroepitaxial structure for quantum cascade laser by molecular beam epitaxy is reported. Optimized growth conditions including substrate temperature, V / III ratio, growth rates, doping levels and interface control are summarized. Double crystal X-ray diffraction and cross-sectional transmission electron microscopy disclose that our grown InP-based heteroepitaxial structure for quantum cascade laser has excellent periodicity and sharp interfaces.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Yu Guo, F.Q. Liu, J.Q. Liu, C.M. Li, Z.G. Wang,