Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1653985 | Materials Letters | 2006 | 5 Pages |
In order to grow diamond film on alumina ceramic, it is essential to control the diamond nucleation properly. Under a gas pressure lower than that used for growth, a high nucleation density of diamond films on alumina, as high as 108/cm2, is successfully achieved by microwave plasma-enhanced chemical vapor deposition method. Based on this, [100]-textured diamond films are successfully deposited on alumina by controlling the substrate temperature. From the results on SEM, XRD and Raman measurements, the substrate temperature has a strong influence on the textured growth and quality of diamond films on alumina substrates. Too low or too high temperature cannot obtain [100]-textured and good-quality films. The optimum substrate temperature range, for the growth of [100]-textured and good-quality diamond films on alumina, should be 800∼860 °C in our experiments.