| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1654317 | Materials Letters | 2006 | 6 Pages |
Abstract
Surface topology of thermally oxidised III–VI compounds (indium and gallium selenides and tellurides) is discussed. It was established that self oxide surfaces possess numerous geometrical morphologies of nanostructures (nanowires for InSe own oxide, nanotrees for gallium telluride, self assembled networks for indium telluride and gallium selenide). The temperature influence on self oxide films composition is compared for all of the structures.
Related Topics
Physical Sciences and Engineering
Materials Science
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Authors
O.A. Balitskii,