Synthesis of radial-aligned GaN nanorods by ammoniating Ga2O3 films on Mg layer deposited on Si(111) substrates

Radial-aligned GaN nanorods were synthesized by ammoniating Ga2O3 films on Mg layer deposited on Si(111) substrates. The products were characterized by X-Ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transformed infrared spectra (FTIR) and high-resolution transmission electron microscopy (HRTEM). The SEM images indicated that the products consisted of radial-aligned GaN nanorods. The XRD and the selective area electron diffraction (SAED) patterns showed that nanorods were hexagonal GaN single crystals.