| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1654713 | Materials Letters | 2005 | 4 Pages |
Abstract
TiN thin films were deposited on Si substrate using an R.F. sputter as a function of Ar / N2 ratio of 20 : 30, 10 :3 0 and 0 : 30. The average thickness of thin film was 0.7 μm, while the size of TiN nano-particles dispersed in the matrix was 5∼10 nm in diameter. The microstructure became fine as the flow rate of N2 to Ar gas increased. The hardness and elastic modulus measured by a nanoindentation method were also enhanced. It discussed the fracture pattern took placed at the TiN layer during the indentation.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Taek-Soo Kim, Sang-Shik Park, Byong-Taek Lee,