Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1654842 | Materials Letters | 2005 | 4 Pages |
Abstract
Indium sulphide (InS) was synthesized by using a convenient solvothermal route. The X-ray diffraction analysis confirmed that 180 °C was the optimum temperature for the preparation of InS. Scanning electron microscopic images showed that morphological patterns of the samples varied depending on the growth conditions. Optical band gaps of the samples were determined from the reflectance studies.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
S. Gorai, A. Datta, S. Chaudhuri,