Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1656271 | Surface and Coatings Technology | 2016 | 7 Pages |
Abstract
In this study, [Co0.05GaxZn(0.95 â x)O] films with different Ga contents were co-sputtered on glass substrates by rf magnetron sputtering. The content of Co in the films was fixed at ~ 5 at.%. The content of x [Ga/(Ga + Co + Zn)] varied from 0 to 3.2 at.%. As analyzed by Hall effect measurement, the resistivity (Ï) of the film is 42.90 Ω·cm when x content is 0. When the content of x increases to 3.2 at.%, the Ï value drops greatly to 4.93 Ã 10â 3 Ω·cm. It is found that both the surface roughness and grain size of columnar (Ga, Co)-ZnO films decrease significantly after Ga addition into the films, but the phase structure remains almost unchanged. In magnetic properties analysis, two distinct mechanisms of bound magnetic polaron and carrier-mediated exchange lead to the films presenting different ferromagnetic behaviors in various carrier density regions.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Sheng-Chi Chen, Chung-Hsien Wang, Hui Sun, Chao-Kuang Wen, Chao-Feng Lu, Chia-Lung Tsai, Yi-Keng Fu, Tung-Han Chuang,