Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1657609 | Surface and Coatings Technology | 2014 | 4 Pages |
Abstract
Remote plasma processing (RPP) provides pathways to the formation of photovoltaic (PV) and thin-film-transistor (TFT) devices that include buried interfaces. This is made possible by separate and independent control of (i) plasma excited O- and N-atom deposition precursors in a up-stream plasma chamber, combined with (ii) down-stream injection of Si- and Ge-atoms with control gas flow rates providing control of buried interface bonding at monolayer levels. Devices with intrinsic, B p-type and P n-type “a-Si(H)” & “a-Si,Ge(H)” layers require 10% bonded H in monolayer (SiH arrangements) and deposition and/or annealing at temperatures between 240 and 275 °C. Deposition from SiH4 with either PH3 or B2H6 dopant gasses provides spectrally reflecting films which can be annealed yielding fine-grain films for gate, or source and drain regions for TFTs or FETs.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
G. Lucovsky, D.J. Zeller, C. Cheng, Y. Zhang,