Formation of graphene on SiC by chemical vapor deposition with liquid sources

Many studies of graphene and graphene oxide (GO) have been conducted due to their excellent chemical, mechanical and electrical properties and wide potential applications, and various methods are used to fabricate them. In this study, we grew graphene on silicon carbide (SiC) substrates by chemical vapor deposition (CVD) using toluene‐ and xylene-based liquid sources. Raman spectroscopy and TEM analysis confirmed the growth of graphene on SiC substrates when toluene was used and revealed that GO grew when xylene was used. The mechanism of the formation of GO and graphene from the different liquid sources was examined, and the change in thickness and electrical conductivity observed when graphene and GO were reduced through heat treatment was also evaluated.

► Graphene was grown directly on SiC by CVD technique using toluene and xylene sources. ► Graphene and GO were grown when toluene and xylene were used respectively. ► The mechanism of how the liquid sources were grown into graphene and GO was demonstrated. ► After the grown graphene and GO were heat treated, surface properties were changed. ► Electrical conductivity of graphene and GO was measured at different temperatures.