| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1657786 | Surface and Coatings Technology | 2013 | 4 Pages |
In order to obtain high density carbon films with keeping anisotropic deposition profile on trench substrates, we control mass density of carbon films deposited by a H-assisted plasma chemical vapor deposition (CVD) method by ion kinetic energy of ions irradiating on film surface during deposition. The highest mass density of 2.14 g/cm3 is obtained for deposition under the ion energy of 75 eV and it is 1.4 times as high as that for the ion energy of 32 eV. We also have studied etching rate of these films using H2 + N2 discharge plasmas. The lowest etch rate of 1.8 nm/min is obtained for the ion energy of 75 eV and it is 2.8 times as low as that for the ion energy of 32 eV. Etching rate of carbon films decreases exponentially with increasing the mass density of carbon films. Control of ion energy is the key to obtain high mass density carbon films with keeping anisotropic deposition profile on trench substrates.
► We have studied film property of carbon films deposited by H-assisted plasma CVD. ► The highest mass density of 2.14 g/cm3 is obtained for ion energy of 75 eV. ► Etching rate of carbon films decreases exponentially with increasing mass density. ► Ion energy is a key to obtain high density films with keeping anisotropic profile.
