| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1657833 | Surface and Coatings Technology | 2013 | 4 Pages |
Abstract
⺠We examine the effect of the bias voltage on Zr-Ge-N film's microstructure and composition. ⺠We study the thermal stability and electrical property of the Cu/Zr-Ge-N/Si structure. ⺠The Cu/Zr-Ge-N/Si structures kept their integrity, even after being annealed at 800 °C. ⺠In this study we conclude that Zr-Ge-N is superior to ZrN as a copper diffusion barrier on Si.
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Physical Sciences and Engineering
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Authors
L.W. Lin, B. Liu, D. Ren, C.Y. Zhan, G.H. Jiao, K.W. Xu,