| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1657866 | Surface and Coatings Technology | 2013 | 4 Pages |
Abstract
⺠We prepare transparent n-ZnS/p-diamond heterojunction diodes. ⺠The diode shows rectifying behavior with turn-on voltage of ~ 1.1 V. ⺠The current transport mechanism depends on applied bias voltages. ⺠The diode has a broad transparent band from 500 nm to 800 nm region.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Jian Huang, Linjun Wang, Ke Tang, Meiai Lin, Yingzhou Yu, Xionggang Lu, Yiben Xia,