| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1657925 | Surface and Coatings Technology | 2013 | 4 Pages |
Abstract
⺠Oxygen implantation-annealing decreases effectively the vacancy defects of the films. ⺠Annealing cannot remove the effect of oxygen implantation on the structure of films. ⺠Oxygen PIII can adjust effectively TMI of the La0.7Sr0.3MnO3 â δ films. ⺠The higher TMI of films results from the enhancement of double-exchange interaction. ⺠Oxygen implantation has a small effect on room temperature emissivity of the films.
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Authors
Shaoqun Jiang, Xinxin Ma, Gang Wang, Guangze Tang, Zehua Wang, Zehua Zhou,