| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1657926 | Surface and Coatings Technology | 2013 | 4 Pages |
Abstract
⺠Carrier drift mobility μ vs. Si channel direction study using CAOT/DHE technique. ⺠Hole μ of B-doped Si with < 100 > channel direction enhanced vs. < 110 > direction. ⺠Electron μ of As-doped Si with < 100 > channel direction not enhanced vs. < 110 > direction. ⺠However electron μ of P-doped Si with < 100 > channel direction enhanced vs. < 110 > direction.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Shu Qin, Si Prussin, Jason Reyes, Y. Jeff Hu, Allen McTeer,