| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1658623 | Surface and Coatings Technology | 2012 | 8 Pages |
Abstract
⺠Growth of Nb- and Ta-based mixed nitrides by nanoscale reactive ion beam mixing of interfaces. ⺠Kinetics of growth, composition and electronic structure of the films studied by XPS and UPS. ⺠A reactive ion beam mixing kinetics of three stages has been found by factor analysis. ⺠In the third stage, stoichiometric nitride species are transformed into mixed nitride species. ⺠During this transformation, a metal-to-insulator transition is observed in the UPS valence band.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
A. Arranz,