| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1658852 | Surface and Coatings Technology | 2011 | 4 Pages |
Abstract
⺠Photoluminescence of Ge-implanted SiO2 layer with various amount were studied. ⺠Germanium negative ions were used for the shallow implantation with a low energy. ⺠Two-stage annealing in N2 and in air was shown to be effective for PL. ⺠This annealing brought the stronger PL at 390 nm from 3.0 at.%-Ge samples.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Hiroshi Tsuji, Nobutoshi Arai, Masashi Hattori, Masayuki Ohsaki, Yasuhito Gotoh, Junzo Ishikawa,