Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1659620 | Surface and Coatings Technology | 2009 | 6 Pages |
Abstract
Thin films of magnesia were deposited on various substrates using plasma-assisted liquid injection chemical vapor deposition with volatile Mg(tmhd)2·2H2O (1) (tmhd = 2,2,6,6-tetramethyl-3,5-heptanedione). The precursor complexes, Mg2(tmhd)4·(2), and Mg(tmhd)2·pmdien (3) (pmdien; N,N,Nâ²,Nâ³,Nâ³-pentamethyldiethylenetriamine) were prepared from Mg(tmhd)2·2H2O (1). The temperature dependence equilibrium vapor pressure (pe)T data yielded a straight line when log pe was plotted against reciprocal temperature in the range of 360-475 K, leading to standard enthalpy of vaporization (ÎvapH°) values of 59 ± 1 and 67 ± 2 kJ molâ 1 for (2) and (3) respectively. Thin films of magnesium oxide were grown at 773 K using complex (1) on various substrate materials. These films were characterized by X-ray diffraction, scanning electron microscopy and energy dispersive X-ray for their composition and morphology.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Mathew Maria, J. Selvakumar, V.S. Raghunathan, K.S. Nagaraja,