Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1659874 | Surface and Coatings Technology | 2010 | 5 Pages |
Abstract
Al2O3 films were prepared at deposition temperatures (Tdep) from 980 to 1230 K by laser chemical vapor deposition (LCVD) using the continuous wave of a Nd:YAG laser with laser power (PL) up to 260 W. γ-Al2O3 films were obtained at Tdep < 1100 K, whereas α-Al2O3 films were obtained at Tdep > 1100 K. γ-Al2O3 films were morphologically characterized by a cone-like structure, while α-Al2O3 films had hexagonal faceted grains. The highest deposition rate (Rdep) of γ-Al2O3 film was 570 μm hâ 1, while that of α-Al2O3 film was 250 μm hâ 1. α-Al2O3 films in a single phase were obtained at 170 K lower in Tdep and 100 times higher in Rdep than those by conventional thermal CVD.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Hokuto Kadokura, Akihiko Ito, Teiichi Kimura, Takashi Goto,