Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1660133 | Surface and Coatings Technology | 2009 | 5 Pages |
The blistering and exfoliation kinetics of GaAs (100) wafer implanted by hydrogen and helium were studied. The influence of ion fluence, implantation and subsequent annealing temperatures on the blistering and/or exfoliation was studied by Rutherford Backscattering Spectroscopy (RBS), optical microscopy, high resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM). The optimum H+ fluence for the GaAs blistering after annealing in the 160–350 °C temperature range was of 1–2 × 1017 H+/cm2 for implantation temperatures of 120–160 °C. An avalanche type exfoliation was found in the GaAs wafer implanted at room temperature with 100 keV helium ions at fluences of 2–5 × 1016 He+/cm2 after annealing in the 200–300 °C. In case of helium implantation, a notable dependency of the exfoliated depth on the fluence was found: XTEM analysis showing dislocation-bubble lines that serve as a fracture path for exfoliation.