Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1660193 | Surface and Coatings Technology | 2009 | 4 Pages |
Abstract
The electronic properties of defects introduced unintentionally, during electron beam deposition (EBD) of Ti and Mo on Cz grown, B-doped Si and those deliberately introduced by proton and electron irradiation are presented in this paper. Deep level transient spectroscopy (DLTS) studies on the samples revealed the following primary hole traps at 0.32Â eV and 0.54Â eV above the valence band after EBD processing, 0.15Â eV, 0.32Â eV after proton irradiation and 0.17Â eV, 0.23Â eV, 0.33Â eV and 0.60Â eV after electron irradiation. The comparison of the defect levels showed one common defect level at 0.32Â eV above the valence band in the three radiation processed samples, and this hole trap is boron related. Most of the defect levels, created in these three samples, are not similar. Higher defect introduction rates were recorded for the proton when compared to the electron irradiation induced primary deep level states. We have also briefly discussed the annealing behaviour of these primary defect levels.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
A.G.M. Das, C. Nyamhere, F.D. Auret, M. Hayes,