Structural and optical studies of GaSb implanted with iron ions

Single crystal gallium antimonide substrate was implanted with 200 keV iron ions with different ion fluences varying from 1 × 1014 to 1 × 1016 cm− 2. Optical and structural properties have been investigated using the micro-Raman, Fourier transform infrared and grazing-angle X-ray diffraction measurements. Raman studies have shown the amorphization of gallium antimonide at higher fluences. Fourier transform infrared transmission studies over photon energy range 0.3 to 0.7 eV showed the change in the value of optical density over the entire photon energy range for the implanted samples as compared with the non-implanted sample. Damage profile probed by etching the sample was found to be non-uniformly distributed in the implanted sample. Grazing-angle X-ray diffraction spectra recorded at 1, 5 and 10° suggests the presence of defects and disorder in gallium antimonide after implantation.