Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1660338 | Surface and Coatings Technology | 2009 | 4 Pages |
Abstract
The mechanical behavior of interfaces between silicon oxide and metallic thin films is investigated using an alternative approach which is based on the miniaturized cantilever deflection technique (Weihs et al., 1988 [1]). The critical energy release rates for three different silicon oxide/metal systems are determined and the results are discussed in this paper. The technique suggested may be applicable with high spatial resolution for a wide variety of structured thin film systems.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Kurt Matoy, Thomas Detzel, Matthias Müller, Christian Motz, Gerhard Dehm,