Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1660500 | Surface and Coatings Technology | 2008 | 4 Pages |
Abstract
ZrN and TiN films have been deposited on Si substrates without additional heating using plasma based ion implantation & deposition (PBII&D) with pulse voltage from 0 to 5 kV. High quality columnar films have been obtained in both systems with a slight nitrogen deficiency. For ZrN, a marked reduction of the growth rate was observed when depositing with pulse bias, which was not observed for TiN, caused presumably by different partial sputter yields. A transition of the texture from (111) to (200) is again present in both systems, however with the transition occurring at a different pulse bias. Hardness values of 18–20 GPa and 22–24 GPa have been observed for TiN and ZrN, respectively.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
S. Heinrich, S. Schirmer, D. Hirsch, J.W. Gerlach, D. Manova, W. Assmann, S. Mändl,