| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1660540 | Surface and Coatings Technology | 2008 | 4 Pages |
Abstract
Comparative study of I–V characteristics of “metal-semiconductor-metal” structures without coatings and with protective coatings is presented. Regimes for radio frequency deposition of dielectric coatings on the surface of pixeled Schottky junction based on Cl-doped CdTe single crystals with high resistivity (107–1010) Ω·cm were determined. In particular, the films with composition of (TeO2)x–(SiO2)1 − x have demonstrated high isolation properties. Possible applications of new CdTe pixeled detectors with the studied protective coatings for high resolution spectrometry in X- and gamma-ray sensor devices are discussed.
Related Topics
Physical Sciences and Engineering
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Authors
G.I. Kleto, A.I. Savchuk, P.M. Tkachuk, V.I. Tkachuk,