Dielectric barrier discharge assisted chemical vapor deposition of boron nitride phosphide films on a quartz substrate

Boron nitride phosphide films were deposited on a quartz substrate by dielectric barrier discharge assisted chemical vapor deposition. From results of X-ray photoelectron and UV-Vis absorption spectral measurements, the chemical composition of the films may be defined as BN1 − xPx, where the mole number (x) is variable between 0.25-0.58, through modifying the PH3 flow rate in the film deposition process, and the corresponding optical band gap may be modulated between 4.17-3.25 eV. From measurements of X-ray diffraction and high resolution transmission electron microscopy, an amorphous matrix embedded with a hexagonal crystalline phase of BNP with a crystal lattice spacing of 0.35 nm and a textured pattern is observed. The BN1 − xPx films are smooth, well-adhered to the quartz substrate, and display dark resistivities on the order of 1011 Ω cm and ultraviolet light photo/dark conductivity ratios higher than 103, with negligible sensitivity in the visible region, indicating a potential application in visible/blind UV detectors.