Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1661508 | Surface and Coatings Technology | 2008 | 4 Pages |
Abstract
The formation of oxidation-resistant buffer layers on (001) oriented Cu for coated high-temperature superconducting tape applications was investigated. The approach employed Cu/Mg multilayer precursor films that were subsequently annealed to form either Mg-doped fcc Cu or intermetallic Cu2 Mg. The precursor consisted of an Mg/Cu multilayer stack with 5 each of 25 nm thick Mg and 25 nm thick Cu layers which were grown at room temperature by sputter deposition. At annealing temperature of 400 °C, formation of the intermetallic Cu2 Mg was observed. X-ray diffraction showed that the Cu2 Mg (100) oriented grains were epitaxial with respect to the underlying Cu film, possessing a cube-on-cube orientation. In order to test oxidation resistance, CeO2 films were deposited at elevated temperature on Ni/(Cu,Mg)/Cu/MgO structures. In case of the CeO2 film on Ni/Cu/MgO, significant surface roughness due to the metal oxidation is observed. In contrast, no surface roughness is observed in the SEM images for the CeO2/Ni/(Cu,Mg)/Cu/MgO structure.
Keywords
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
K.H. Kim, D.P. Norton, D.K. Christen, J.D. Budai,