| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1661536 | Surface and Coatings Technology | 2007 | 4 Pages |
Abstract
Epitaxial growth of a titanium nitride (TiN) on (6H)-SiC (0001) is achieved at room temperature by means of direct current magnetron sputtering. The epitaxial relationship is established by X-ray pole figure and Φ-scan. Cross-sectional transmission electron microscopy and pole figure analysis show that the orientation relationship is(111)TiN‖(0001)SiC[01¯1]TiN‖[12¯10]SiC,It is different from that on sapphire,“(111)TiN‖(0001)Al2O3[101¯]TiN‖[101¯0]Al2O3”,in spite of the same crystal structure of substrate surfaces. Different lattice mismatch is a plausible explanation.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Shang-Shian Yang, Yan-Ru Lin, Shinn-Tyan Wu,